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VISHAY
SFH692AT
Vishay Semiconductors
Photodarlington Optocoupler, High BVCEO Voltage Miniflat SOP Package
Features
* SOP (Small Outline Package) * Isolation Test Voltage, 3750 VRMS (1.0 s) * High Collector-Emitter Breakdown Voltage, VCEO = 300 V * Low Saturation Voltage * Fast Switching Times * Temperature Stable * Low Coupling capacitance * End-Stackable, .100 " (2.54 mm) Spacing
i179067
A1
4C
C2
3E
Agency Approvals
* UL - File No. E52744
Applications
High density mounting or space sensitive PCBs PLCs Telecommunication
100 mil lead pitch miniflat package. It features a high current transfer ratio, low coupling capacitance, and high isolation voltage. The coupling devices are designed for signal transmission between two electrically separated circuits. The SFH692AT is available only on tape and reel.
Order Information
Part SFH692AT Remarks CTR > 1000 %, SMD
Description
The SFH692AT has a GaAs infrared emitting diode emitter, which is optically coupled to silicon planar phototransistor detector, and is incorporated in a 4 pin
For additional order information see Option Section
Absolute Maximum Ratings
Tamb = 25 C, unless otherwise specified Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the devise. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability.
Emitter
Parameter DC Forward current Reverse voltage Surge Forward current Total power dissipation tp 10 s Test condition Symbol IF VR IFSM PDiss Value 50 6.0 2.5 80 Unit mA V A mW
Document Number 83720 Rev. 5, 25-Jun-03
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SFH692AT
Vishay Semiconductors Detector
Parameter Collector-emitter voltage Emitter-collector voltage Collector current tp 1.0 ms Total power dissipation Test condition Symbol VCE VEC IC IC PDiss Value 300 0.3 50 150 200
VISHAY
Unit V V mA mA mW
Coupler
Parameter Isolation test voltage between emitter and detector, (1.0 s) Creepage Clearance Comparative tracking index per DIN IEC 112/VDEO 303, part 1 Isolation resistance VIO = 500 V, Tamb = 25 C VIO = 500 V, Tamb = 100 C Storage temperature range Ambient temperature range Junction temperature Soldering temperature (max. 10 s. dip soldering distance to seating plane 1.5 mm) RIO RIO Tstg Tamb Tj Tsd Test condition Symbol VIO Value 3750 5.0 5.5 175 1012 1011 - 55 to + 150 - 55 to + 100 100 260 C C C C Unit VRMS mm mm
Electrical Characteristics
Tamb = 25 C, unless otherwise specified Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements.
Emitter
Parameter Forward voltage Reverse current Capacitance Thermal resistance Test condition IF = 10 mA VR = 6.0 V VR = 0 V, f = 1.0 MHz Symbol VF IR CO RthJA Min Typ. 1.2 0.01 14 750 Max 1.5 10 Unit V A pF K/W
Detector
Parameter Collector-emitter leakage current Capacitance Thermal resistance Test condition VCE = 200 V VCE = 5.0 V, f = 1.0 MHz Symbol ICEO CCE RthJA 39 500 Min Typ. Max 200 Unit nA pF K/W
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Document Number 83720 Rev. 5, 25-Jun-03
VISHAY
Coupler
Parameter Collector-emitter saturation voltage Coupling capacitance Test condition IF = 1.0 mA, IC = 10 mA IF = 10 mA, IC = 100 mA f = 1.0 MHz, VI-O = 0 V Symbol VCEsat VCEsat CC 0.3 0.6 Min Typ.
SFH692AT
Vishay Semiconductors
Max 1.0 1.2
Unit V V pF
Current Transfer Ratio
Parameter Current transfer ratio Saturated CTR Test condition IF = 1.0 mA, VCE = 1.0 V IF = 10 mA, VCE = 1.0 V Symbol CTR CTRSAT Min 1000 500 Typ. Max Unit % %
Switching Characteristics
Parameter Rise time Test condition IF = 10.0 mA, VCC = 10.0 V, RL = 100 IF = 16.0 mA, VCC = 10.0 V, RL = 180 Fall time IF = 10.0 mA, VCC = 10.0 V, RL = 100 IF = 16.0 mA, VCC = 10.0 V, RL = 180 Turn-on time IF = 10.0 mA, VCC = 10.0 V, RL=100 IF = 16.0 mA, VCC = 10.0 V, RL = 180 Turn-off time IF = 10.0 mA, VCC = 10.0 V, RL=100 IF = 16.0 mA, VCC = 10.0 V, RL = 180 Symbol tr tr tf tf ton ton toff toff 53.5 1.5 29.0 20.5 4.5 1.0 14.5 Min Typ. Max 3.5 Unit s s s s s s s s
Typical Characteristics (Tamb = 25 C unless otherwise specified)
VCC = 10.0 V IF RL = 100 i VO
iSFH692AT_01
Figure 1. Linear Operation ( without saturation)
Document Number 83720 Rev. 5, 25-Jun-03
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SFH692AT
Vishay Semiconductors Package Dimensions in Inches (mm)
4 3
VISHAY
0.190 (4.83) 0.170 (4.32)
ISO Method A
1
2
Pin one I.D. (on chamfer side of package) 0.184 (4.67) 0.164 (4.17) 0.024 (0.61) 0.034 (0.86) 0.080 (2.03) 0.075 (1.91) 6 0.017 (0.43) 0.013 (0.35) 0.008 (0.20) 0.004 (0.10)
0.220 (5.59) 0.200 (5.08) 40 10
i178039
0.018 (0.46) 0.014 (0.36) 0.105 (2.67) 0.095 (2.41)
LEADS COPLANARITY 0.004 (0.10) Max.
0.025 (0.63) 0.015 (0.38) 0.284 (7.21) 0.264 (6.71)
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Document Number 83720 Rev. 5, 25-Jun-03
VISHAY
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements.
SFH692AT
Vishay Semiconductors
2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Document Number 83720 Rev. 5, 25-Jun-03
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